HY3215W MOSFET MCP602 and a 2–3 samples/second sampling
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HY3215W MOSFET MCP602 and a 2–3 samples/second samplingSpecifications: Type Designator: HY3215W Type of Transistor: MOSFET Type of Control Channel: N Channel Maximum Power Dissipation (Pd): 349 W Maximum Drain Source Voltage Vds : 150 V Maximum Gate Source Voltage Vgs : 25 V Maximum Gate Threshold Voltage Vgs(th) : 5 V Maximum Drain Current Id : 130 A Maximum Junction Temperature (Tj): 175 C Total Gate Charge (Qg): 135 nC Rise Time (tr): 40 nS Drain Source Capacitance (Cd): 480 pF Maximum Drain Source On
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